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Thèses et mémoires en ligne: Étude et modélisation du transistor GCGS DG MOSFET nanométrique
Date d'affichage [2015-Dec-09] (ID: 430)

Contenu du memoire

List of figures
List of tables
List of publications
INTRODUCTION
CHAPTER I: DEEP SUBMICRON MOSFETs
I.1 – Introduction
I.2 – Evolution of CMOS technology
I.3 – MOSFET structure and operation
I.3.1. Presentation of the Structure
I.3.2. Operation Modes
I.4 – Small signal parameters
I.5 – Miniaturization effects
I.6 – Emergent solutions
I.6.1. High-k and metal gate integration
I.6.2. Strain-enhanced mobility
I.6.3. Multi-gate devices
I.7 – Nanotechnologies
I.8 – Conclusion
CHAPTER II :DEFECTS IN MOSFET DEVICES
II.1 – Introduction
II.2 – Defects classification
II.2.1 Bulk defects
II.2.2 Hot carrier
II.3 – Device degradation models
II.4 – Conclusion
CHAPTER III: MODELING OF GCGS DG MOSFET IN SUBTHRESHOLD REGION
III.1 – Introduction
III.2 – Model formulation
III.2.1. Surface potential
III.2.2.Threshold voltage
III.2.3. Subthreshold current
III.2.4. Subthreshold swing
III.3 – Results and discussion
III.4 – Conclusion
CHAPTER IV: MODELING OF GS DG MOSFET IN LINEAR AND SATURATION REGION
IV.1 – Introduction
IV.2 – Description of the studied structure
IV.3 – Proposed models formulation
IV.3.1. Piece-Wise Drain Current Models
IV.3.2. Surface potential based drain current model
IV.4 – Results and discussion
IV.4.1. Piece-Wise Drain Current Models
IV.4.2. Surface potential based drain current model
IV.5 – Impact of hot-carrier degradation on IC design
IV.6 – Conclusions
CONCLUSION AND FUTURE WORK
REFERENCES


Titre Thèses et mémoires en ligne: Étude et modélisation du transistor GCGS DG MOSFET nanométrique
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Posté par Memoire Online
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Ecole, Université..
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Diplome Diplome -> Master
Type Type mémoire -> PDF mémoire
Language Language -> Anglais
Classification Classification -> Sciences